Part Details for BSC886N03LSGATMA1 by Infineon Technologies AG
Overview of BSC886N03LSGATMA1 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC886N03LSGATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97Y1253
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Newark | Mosfet, N-Ch, 30V, 65A, Pg-Tdson-8, Transistor Polarity:N Channel, Continuous Drain Current Id:65A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.005Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.2V, Power Rohs Compliant: Yes |Infineon BSC886N03LSGATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.8400 | Buy Now |
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Rochester Electronics | BSC886N03 - Power Field-Effect Transistor, 13A, 30V, 0.0092ohm, N-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 13225 |
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$0.2315 / $0.2723 | Buy Now |
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DISTI #
2617422RL
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element14 Asia-Pacific | MOSFET, N-CH, 30V, 65A, PG-TDSON-8 RoHS: Compliant Min Qty: 100 Container: Reel | 4976 |
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$0.2829 / $0.4288 | Buy Now |
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DISTI #
2617422
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element14 Asia-Pacific | MOSFET, N-CH, 30V, 65A, PG-TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape | 4976 |
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$0.2829 / $0.6281 | Buy Now |
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DISTI #
2617422
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Farnell | MOSFET, N-CH, 30V, 65A, PG-TDSON-8 RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Cut Tape | 4976 |
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$0.4521 / $0.8412 | Buy Now |
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DISTI #
2617422RL
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Farnell | MOSFET, N-CH, 30V, 65A, PG-TDSON-8 RoHS: Compliant Min Qty: 100 Lead time: 51 Weeks, 1 Days Container: Reel | 4976 |
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$0.4521 / $0.6422 | Buy Now |
Part Details for BSC886N03LSGATMA1
BSC886N03LSGATMA1 CAD Models
BSC886N03LSGATMA1 Part Data Attributes:
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BSC886N03LSGATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC886N03LSGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TDSON-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 20 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.0092 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 260 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC886N03LSGATMA1
This table gives cross-reference parts and alternative options found for BSC886N03LSGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC886N03LSGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDC796N_NL | Power Field-Effect Transistor, 12.5A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, FLMP, SUPERSOT-6 | Fairchild Semiconductor Corporation | BSC886N03LSGATMA1 vs FDC796N_NL |
| BSC889N03LSGE8178 | Power Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC886N03LSGATMA1 vs BSC889N03LSGE8178 |
| BSC886N03LSGE8178 | Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC886N03LSGATMA1 vs BSC886N03LSGE8178 |
| DMN3010LK3-13 | Power Field-Effect Transistor, 13.1A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Diodes Incorporated | BSC886N03LSGATMA1 vs DMN3010LK3-13 |
| BSC889N03LSGATMA1 | Power Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC886N03LSGATMA1 vs BSC889N03LSGATMA1 |