Datasheets
FDA20N50_F109 by:

N-Channel UniFETTM MOSFET 500V, 22A, 230mΩ, TO-3PN 3L, 3600-RAIL

Part Details for FDA20N50_F109 by onsemi

Overview of FDA20N50_F109 by onsemi

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Price & Stock for FDA20N50_F109

Part # Distributor Description Stock Price Buy
DISTI # FDA20N50-F109
Avnet Americas Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FDA20N50-F109) RoHS: Compliant Min Qty: 424 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube 426 Partner Stock
  • 424 $1.7464
  • 430 $1.6992
  • 850 $1.6520
  • 2,200 $1.6048
  • 4,300 $1.5576
  • 22,000 $1.5104
  • 43,000 $1.4632
$1.4632 / $1.7464 Buy Now
DISTI # FDA20N50-F109
Avnet Americas Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FDA20N50-F109) RoHS: Compliant Min Qty: 424 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube 426 Partner Stock
  • 424 $1.7464
  • 430 $1.6992
  • 850 $1.6520
  • 2,200 $1.6048
  • 4,300 $1.5576
  • 22,000 $1.5104
  • 43,000 $1.4632
$1.4632 / $1.7464 Buy Now

Part Details for FDA20N50_F109

FDA20N50_F109 CAD Models

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FDA20N50_F109 Part Data Attributes:

FDA20N50_F109 onsemi
Buy Now Datasheet
Compare Parts:
FDA20N50_F109 onsemi N-Channel UniFETTM MOSFET 500V, 22A, 230mΩ, TO-3PN 3L, 3600-RAIL
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3
Manufacturer Package Code TO3PN03A
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Additional Feature FAST SWITCHING
Avalanche Energy Rating (Eas) 1110 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.23 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 280 W
Pulsed Drain Current-Max (IDM) 88 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDA20N50_F109

This table gives cross-reference parts and alternative options found for FDA20N50_F109. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDA20N50_F109, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDA20N50-F109 Power MOSFET, N-Channel, UniFETTM, 500 V, 22 A, 230 mΩ, TO-3P, TO-3PN 3L, 450-TUBE onsemi FDA20N50_F109 vs FDA20N50-F109
Part Number Description Manufacturer Compare
APT5024BLL Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Microsemi Corporation FDA20N50_F109 vs APT5024BLL
IXFT21N50Q Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268, TO-268, 3 PIN IXYS Corporation FDA20N50_F109 vs IXFT21N50Q
STW20NM50FD N-Channel 500V - 0.22Ohm - 20A - TO-247 FDmesh(TM) POWER MOSFET (with FAST DIODE) STMicroelectronics FDA20N50_F109 vs STW20NM50FD
IRFP460BPBF TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix FDA20N50_F109 vs IRFP460BPBF
IXTH21N50 Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN IXYS Corporation FDA20N50_F109 vs IXTH21N50
FDA20N50-F109 Power MOSFET, N-Channel, UniFETTM, 500 V, 22 A, 230 mΩ, TO-3P, TO-3PN 3L, 450-TUBE onsemi FDA20N50_F109 vs FDA20N50-F109
APT5024BLLG Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN Microsemi Corporation FDA20N50_F109 vs APT5024BLLG
RF4E20N50ST Power Field-Effect Transistor, 20A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA Fairchild Semiconductor Corporation FDA20N50_F109 vs RF4E20N50ST
APT5024BFLL Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Microsemi Corporation FDA20N50_F109 vs APT5024BFLL
IRFP460BPBF Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, Vishay Intertechnologies FDA20N50_F109 vs IRFP460BPBF

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