Part Details for FF200R12KS4HOSA1 by Infineon Technologies AG
Overview of FF200R12KS4HOSA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FF200R12KS4HOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC8639
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Newark | Igbt, Module, N-Ch, 1.2Kv, 275A, Transistor Polarity:N Channel, Dc Collector Current:275A, Collector Emitter Saturation Voltage Vce(On):3.2V, Power Dissipation Pd:1.4Kw, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FF200R12KS4HOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$121.2100 / $140.6000 | Buy Now |
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DISTI #
448-FF200R12KS4HOSA1-ND
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DigiKey | IGBT MOD 1200V 275A 1400W Min Qty: 1 Lead time: 16 Weeks Container: Tray |
2 In Stock |
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$143.3973 / $159.0800 | Buy Now |
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DISTI #
FF200R12KS4HOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 275A 20V Screw Mount Tray - Trays (Alt: FF200R12KS4HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$171.9260 | Buy Now |
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Future Electronics | FF200R12KS4 Series 1200 V 275 A 1400 W Chassis Mount IGBT Module RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tray | 0Tray |
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$143.4200 / $146.0700 | Buy Now |
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Rochester Electronics | FF200R12KS4 - MEDIUM POWER 62MM RoHS: Compliant Status: Active Min Qty: 1 | 1 |
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$137.4900 / $161.7600 | Buy Now |
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DISTI #
FF200R12KS4HOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 275A 20V Screw Mount Tray - Trays (Alt: FF200R12KS4HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$171.9260 | Buy Now |
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DISTI #
FF200R12KS4HOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 275A 20V Screw Mount Tray - Trays (Alt: FF200R12KS4HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$171.9260 | Buy Now |
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DISTI #
SP000100707
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EBV Elektronik | Transistor IGBT Module N-CH 1200V 275A 20V Screw Mount Tray (Alt: SP000100707) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 2 Weeks, 3 Days | EBV - 0 |
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Buy Now | |
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DISTI #
2726123
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element14 Asia-Pacific | IGBT, MODULE, N-CH, 1.2KV, 275A RoHS: Compliant Min Qty: 1 Container: Each | 4 |
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$187.7734 | Buy Now |
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DISTI #
2726123
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Farnell | IGBT, MODULE, N-CH, 1.2KV, 275A RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each | 4 |
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$159.3343 | Buy Now |
Part Details for FF200R12KS4HOSA1
FF200R12KS4HOSA1 CAD Models
FF200R12KS4HOSA1 Part Data Attributes
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FF200R12KS4HOSA1
Infineon Technologies AG
Buy Now
Datasheet
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FF200R12KS4HOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | FLANGE MOUNT, R-XUFM-X7 | |
| Pin Count | 7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | FAST | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 275 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 590 ns | |
| Turn-on Time-Nom (ton) | 180 ns |
Alternate Parts for FF200R12KS4HOSA1
This table gives cross-reference parts and alternative options found for FF200R12KS4HOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF200R12KS4HOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MG300Q2YS65H | TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, 2-109C4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | FF200R12KS4HOSA1 vs MG300Q2YS65H |
| FF200R12KT3HOSA1 | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | FF200R12KS4HOSA1 vs FF200R12KT3HOSA1 |
| SKM300GB125D | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, CASE D 56, SEMITRANS 3, 7 PIN | SEMIKRON | FF200R12KS4HOSA1 vs SKM300GB125D |
| FF200R12KT3_E | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | FF200R12KS4HOSA1 vs FF200R12KT3_E |
| APTGT200A120G | Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | FF200R12KS4HOSA1 vs APTGT200A120G |
| FF200R12KE4HOSA1 | Insulated Gate Bipolar Transistor, 240A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | FF200R12KS4HOSA1 vs FF200R12KE4HOSA1 |
| MII200-12A4 | Insulated Gate Bipolar Transistor, 270A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Littelfuse Inc | FF200R12KS4HOSA1 vs MII200-12A4 |
| BSM150GB120DLC | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | FF200R12KS4HOSA1 vs BSM150GB120DLC |
| APTGF200A120D3G | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, D3, 11 PIN | Microsemi Corporation | FF200R12KS4HOSA1 vs APTGF200A120D3G |
| MII300-12A4 | Insulated Gate Bipolar Transistor, 330A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Littelfuse Inc | FF200R12KS4HOSA1 vs MII300-12A4 |