Part Details for FF200R12KT3HOSA1 by Infineon Technologies AG
Overview of FF200R12KT3HOSA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FF200R12KT3HOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC8640
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Newark | Igbt, Module, N-Ch, 1.2Kv, 295A, Transistor Polarity:N Channel, Dc Collector Current:295A, Collector Emitter Saturation Voltage Vce(On):1.7V, Power Dissipation Pd:1.05Kw, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FF200R12KT3HOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$110.3600 / $127.6100 | Buy Now |
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DISTI #
448-FF200R12KT3HOSA1-ND
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DigiKey | IGBT MODULE 1200V 1050W Min Qty: 1 Lead time: 16 Weeks Container: Tray |
10 In Stock |
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$133.1200 / $149.2600 | Buy Now |
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DISTI #
2156-FF200R12KT3HOSA1-ND
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DigiKey | IGBT MODULE 1200V 1050W Min Qty: 1 Lead time: 16 Weeks Container: Bulk MARKETPLACE PRODUCT |
6 In Stock |
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$144.2300 | Buy Now |
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DISTI #
FF200R12KT3HOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 295A 20V Screw Mount Tray - Trays (Alt: FF200R12KT3HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$139.7900 / $169.7450 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tray | 0Tray |
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$140.6400 | Buy Now |
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Rochester Electronics | FF150R12 - IGBT Module RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 6 |
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$123.7700 / $145.6100 | Buy Now |
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DISTI #
FF200R12KT3HOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 295A 20V Screw Mount Tray - Trays (Alt: FF200R12KT3HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$139.7900 / $169.7450 | Buy Now |
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DISTI #
FF200R12KT3HOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 295A 20V Screw Mount Tray - Trays (Alt: FF200R12KT3HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$139.7900 / $169.7450 | Buy Now |
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DISTI #
SP000100789
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EBV Elektronik | Trans IGBT Module N-CH 1.2KV 295A 7-pin 62MM-1 (Alt: SP000100789) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 2 Weeks, 3 Days | EBV - 0 |
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Buy Now | |
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DISTI #
2726124
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element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$156.0179 | Buy Now |
Part Details for FF200R12KT3HOSA1
FF200R12KT3HOSA1 CAD Models
FF200R12KT3HOSA1 Part Data Attributes
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FF200R12KT3HOSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
FF200R12KT3HOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | FLANGE MOUNT, R-XUFM-X7 | |
| Pin Count | 7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 295 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 680 ns | |
| Turn-on Time-Nom (ton) | 215 ns |
Alternate Parts for FF200R12KT3HOSA1
This table gives cross-reference parts and alternative options found for FF200R12KT3HOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF200R12KT3HOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FF200R12KT3_E | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | FF200R12KT3HOSA1 vs FF200R12KT3_E |