Datasheets
FQU2N90TU-AM002 by:

Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK, TO-251 3L (IPAK), 5040-TUBE

Part Details for FQU2N90TU-AM002 by onsemi

Overview of FQU2N90TU-AM002 by onsemi

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Applications Automotive

Price & Stock for FQU2N90TU-AM002

Part # Distributor Description Stock Price Buy
DISTI # 48AC1194
Newark Mosfet, N-Ch, 900V, 1.7A, Ipak, Channel Type:N Channel, Drain Source Voltage Vds:900V, Continuous Drain Current Id:1.7A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Onsemi FQU2N90TU-AM002 Min Qty: 5040 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 2,500 $0.5620
  • 10,000 $0.5450
$0.5450 / $0.5620 Buy Now
DISTI # FQU2N90TU-AM002
Avnet Americas Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU2N90TU-AM002) RoHS: Compliant Min Qty: 1316 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube 5040 Partner Stock
  • 1,316 $0.5624
  • 1,400 $0.5472
  • 2,700 $0.5320
  • 6,600 $0.5168
  • 14,000 $0.5016
  • 66,000 $0.4864
  • 140,000 $0.4712
$0.4712 / $0.5624 Buy Now
DISTI # FQU2N90TU-AM002
Avnet Americas Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU2N90TU-AM002) RoHS: Compliant Min Qty: 1316 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube 5040 Partner Stock
  • 1,316 $0.5624
  • 1,400 $0.5472
  • 2,700 $0.5320
  • 6,600 $0.5168
  • 14,000 $0.5016
  • 66,000 $0.4864
  • 140,000 $0.4712
$0.4712 / $0.5624 Buy Now
DISTI # FQU2N90TU-AM002
TME Transistor: N-MOSFET, unipolar, 900V, 1.08A, Idm: 6.8A, 50W, IPAK Min Qty: 1 0
  • 1 $1.1000
  • 5 $0.9900
  • 25 $0.8700
  • 70 $0.7800
  • 350 $0.7300
$0.7300 / $1.1000 RFQ
Flip Electronics Stock, ship today 5040
  • 1 $0.3800
$0.3800 RFQ

Part Details for FQU2N90TU-AM002

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FQU2N90TU-AM002 Part Data Attributes:

FQU2N90TU-AM002 onsemi
Buy Now Datasheet
Compare Parts:
FQU2N90TU-AM002 onsemi Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK, TO-251 3L (IPAK), 5040-TUBE
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Part Package Code TO-251 3L (IPAK)
Manufacturer Package Code 369AR
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Configuration SINGLE
Drain Current-Max (ID) 1.7 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Number of Elements 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Alternate Parts for FQU2N90TU-AM002

This table gives cross-reference parts and alternative options found for FQU2N90TU-AM002. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQU2N90TU-AM002, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQU2N90TU Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 Fairchild Semiconductor Corporation FQU2N90TU-AM002 vs FQU2N90TU
FQU2N90TU-WS Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK, TO-251 3L (IPAK), 5040-TUBE onsemi FQU2N90TU-AM002 vs FQU2N90TU-WS
FQU2N90TU 1.7A, 900V, 7.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 Rochester Electronics LLC FQU2N90TU-AM002 vs FQU2N90TU
FQU2N90TU_AM002 N-Channel QFET® MOSFET 900V, 1.7A, 7.2Ω, TO-251 3L (IPAK), 30240-RAIL onsemi FQU2N90TU-AM002 vs FQU2N90TU_AM002
FQU2N90 Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 Fairchild Semiconductor Corporation FQU2N90TU-AM002 vs FQU2N90
Part Number Description Manufacturer Compare
FQD2N90TM 1.7A, 900V, 7.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 Rochester Electronics LLC FQU2N90TU-AM002 vs FQD2N90TM
FQU2N90TU-WS Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK, TO-251 3L (IPAK), 5040-TUBE onsemi FQU2N90TU-AM002 vs FQU2N90TU-WS
STD2NK90ZT4 N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in DPAK package STMicroelectronics FQU2N90TU-AM002 vs STD2NK90ZT4
FQU2N90TU Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 Fairchild Semiconductor Corporation FQU2N90TU-AM002 vs FQU2N90TU
FQU2N90TU_AM002 N-Channel QFET® MOSFET 900V, 1.7A, 7.2Ω, TO-251 3L (IPAK), 30240-RAIL onsemi FQU2N90TU-AM002 vs FQU2N90TU_AM002
FQU2N90 Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 Fairchild Semiconductor Corporation FQU2N90TU-AM002 vs FQU2N90
FQD2N90TF Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQU2N90TU-AM002 vs FQD2N90TF
FQD2N90TM Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Fairchild Semiconductor Corporation FQU2N90TU-AM002 vs FQD2N90TM
STD3NK90ZT4 N-channel 900 V, 4.1 Ohm typ., 3 A SuperMESH Power MOSFET in DPAK package STMicroelectronics FQU2N90TU-AM002 vs STD3NK90ZT4

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