Part Details for FQU2N90TU-WS by onsemi
Overview of FQU2N90TU-WS by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for FQU2N90TU-WS
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
48AC1195
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Newark | Mosfet, N-Ch, 900V, 1.7A, Ipak, Channel Type:N Channel, Drain Source Voltage Vds:900V, Continuous Drain Current Id:1.7A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Onsemi FQU2N90TU-WS Min Qty: 5040 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Rochester Electronics | Power MOSFET, N-Channel, QFET, 900 V, 1.7 A, 7.2 , IPAK ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 74000 |
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$0.5727 / $0.6738 | Buy Now |
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DISTI #
FQU2N90TU-WS
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TME | Transistor: N-MOSFET, unipolar, 900V, 1.08A, Idm: 6.8A, 50W, IPAK Min Qty: 1 | 0 |
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$0.4710 / $0.8740 | RFQ |
Part Details for FQU2N90TU-WS
FQU2N90TU-WS CAD Models
FQU2N90TU-WS Part Data Attributes:
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FQU2N90TU-WS
onsemi
Buy Now
Datasheet
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Compare Parts:
FQU2N90TU-WS
onsemi
Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK, TO-251 3L (IPAK), 5040-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-251 3L (IPAK) | |
| Manufacturer Package Code | 369AR | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 1.7 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 150 °C | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Alternate Parts for FQU2N90TU-WS
This table gives cross-reference parts and alternative options found for FQU2N90TU-WS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQU2N90TU-WS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQU2N90TU | Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Fairchild Semiconductor Corporation | FQU2N90TU-WS vs FQU2N90TU |
| FQU2N90TU | 1.7A, 900V, 7.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | Rochester Electronics LLC | FQU2N90TU-WS vs FQU2N90TU |
| FQU2N90TU_AM002 | N-Channel QFET® MOSFET 900V, 1.7A, 7.2Ω, TO-251 3L (IPAK), 30240-RAIL | onsemi | FQU2N90TU-WS vs FQU2N90TU_AM002 |
| FQU2N90 | Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Fairchild Semiconductor Corporation | FQU2N90TU-WS vs FQU2N90 |