Part Details for IPD90N06S4L03ATMA2 by Infineon Technologies AG
Overview of IPD90N06S4L03ATMA2 by Infineon Technologies AG
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPD90N06S4L03ATMA2
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
49AC0298
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Newark | Mosfet, N-Ch, 60V, 90A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:90A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon IPD90N06S4L03ATMA2 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 98 |
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$0.9760 / $1.1600 | Buy Now |
DISTI #
99AK9895
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Newark | Mosfet, N-Channel, 60V, 90A, To-252 Rohs Compliant: Yes |Infineon IPD90N06S4L03ATMA2 Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.9570 / $0.9760 | Buy Now |
DISTI #
448-IPD90N06S4L03ATMA2CT-ND
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DigiKey | MOSFET N-CH 60V 90A TO252-31 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5276 In Stock |
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$0.9206 / $2.1200 | Buy Now |
DISTI #
49AC0298
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Avnet Americas | Trans MOSFET N-CH 60V 90A 3-Pin TO-252 T/R - Product that comes on tape, but is not reeled (Alt: 49AC0298) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 4 Days Container: Ammo Pack | 98 Partner Stock |
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$1.4600 / $2.1900 | Buy Now |
DISTI #
726-IPD90N06S4L03ATM
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Mouser Electronics | MOSFET MOSFET RoHS: Compliant | 7489 |
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$0.9200 / $2.1200 | Buy Now |
DISTI #
69837953
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Verical | Trans MOSFET N-CH 60V 90A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 19 Package Multiple: 1 | Americas - 2500 |
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$1.1038 / $1.6750 | Buy Now |
DISTI #
73474578
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Verical | Trans MOSFET N-CH 60V 90A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2327 | Americas - 2500 |
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$0.8760 / $0.9240 | Buy Now |
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Rochester Electronics | IPD90N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 4741 |
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$0.8827 / $1.0400 | Buy Now |
DISTI #
49AC0298
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Avnet Americas | Trans MOSFET N-CH 60V 90A 3-Pin TO-252 T/R - Product that comes on tape, but is not reeled (Alt: 49AC0298) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 4 Days Container: Ammo Pack | 98 Partner Stock |
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$1.4600 / $2.1900 | Buy Now |
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Ameya Holding Limited | MOSFET N-CH 60V 90A TO252-3 | 3744 |
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RFQ |
Part Details for IPD90N06S4L03ATMA2
IPD90N06S4L03ATMA2 CAD Models
IPD90N06S4L03ATMA2 Part Data Attributes:
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IPD90N06S4L03ATMA2
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD90N06S4L03ATMA2
Infineon Technologies AG
Power Field-Effect Transistor, 90A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252-3-11, 3/2 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks, 4 Days | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 331 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 90 A | |
Drain-source On Resistance-Max | 0.0035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 360 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IPD90N06S4L03ATMA2
This table gives cross-reference parts and alternative options found for IPD90N06S4L03ATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD90N06S4L03ATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB034N06L3G | Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPD90N06S4L03ATMA2 vs IPB034N06L3G |
IPB90N06S404ATMA1 | Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPD90N06S4L03ATMA2 vs IPB90N06S404ATMA1 |
IPP90N06S4L04AKSA2 | Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPD90N06S4L03ATMA2 vs IPP90N06S4L04AKSA2 |
IPB034N06L3GATMA1 | Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPD90N06S4L03ATMA2 vs IPB034N06L3GATMA1 |
IPB037N06N3G | Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPD90N06S4L03ATMA2 vs IPB037N06N3G |
IPB90N06S4-04 | Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPD90N06S4L03ATMA2 vs IPB90N06S4-04 |