Part Details for IRFF9222 by Harris Semiconductor
Overview of IRFF9222 by Harris Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFF9222
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRFF9222-ND
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DigiKey | P-CHANNEL POWER MOSFET Min Qty: 160 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
2436 In Stock |
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$1.8800 | Buy Now |
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Rochester Electronics | IRFF9222 - Automotive HEXFET P-Channel Power MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 2436 |
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$1.6100 / $1.9000 | Buy Now |
Part Details for IRFF9222
IRFF9222 CAD Models
IRFF9222 Part Data Attributes
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IRFF9222
Harris Semiconductor
Buy Now
Datasheet
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IRFF9222
Harris Semiconductor
Power Field-Effect Transistor, 2A I(D), 200V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 290 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 2.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 20 W | |
| Power Dissipation-Max (Abs) | 20 W | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 195 ns | |
| Turn-on Time-Max (ton) | 90 ns |
Alternate Parts for IRFF9222
This table gives cross-reference parts and alternative options found for IRFF9222. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF9222, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFF9222 | Power Field-Effect Transistor, 2A I(D), 200V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | International Rectifier | IRFF9222 vs IRFF9222 |
| IRFF9222 | 2A, 200V, 2.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | IRFF9222 vs IRFF9222 |
| IRFF9222 | 2A, 200V, 2.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Rochester Electronics LLC | IRFF9222 vs IRFF9222 |