Datasheets
IXTT30N50L by:

Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN

Part Details for IXTT30N50L by IXYS Corporation

Overview of IXTT30N50L by IXYS Corporation

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Applications Renewable Energy Robotics and Drones

Price & Stock for IXTT30N50L

Part # Distributor Description Stock Price Buy
DISTI # IXTT30N50L-ND
DigiKey MOSFET N-CH 500V 30A TO268 Lead time: 24 Weeks Container: Tube Temporarily Out of Stock
Buy Now
DISTI # 747-IXTT30N50L
Mouser Electronics MOSFET 30 Amps 500V 0
  • 1 $11.7700
  • 10 $10.3700
  • 30 $10.0900
  • 60 $9.5200
  • 120 $8.9600
  • 270 $8.6800
  • 510 $8.1200
  • 1,020 $7.4500
$7.4500 / $11.7700 Order Now
DISTI # IXTT30N50L
TME Transistor: N-MOSFET, unipolar, 500V, 30A, 400W, TO268, 500ns Min Qty: 1 0
  • 1 $11.2200
  • 3 $10.0500
  • 10 $8.8800
  • 30 $7.9800
$7.9800 / $11.2200 RFQ

Part Details for IXTT30N50L

IXTT30N50L CAD Models

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IXTT30N50L Part Data Attributes:

IXTT30N50L IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXTT30N50L IXYS Corporation Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-268AA
Package Description PLASTIC, TO-268, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 1500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-268AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTT30N50L

This table gives cross-reference parts and alternative options found for IXTT30N50L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTT30N50L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTT30N50L2 Power Field-Effect Transistor, Littelfuse Inc IXTT30N50L vs IXTT30N50L2
IXTH30N50L Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation IXTT30N50L vs IXTH30N50L
IXTQ30N50L2 Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN IXYS Corporation IXTT30N50L vs IXTQ30N50L2
IXTH30N50L Power Field-Effect Transistor, Littelfuse Inc IXTT30N50L vs IXTH30N50L
IXTQ30N50L Power Field-Effect Transistor, Littelfuse Inc IXTT30N50L vs IXTQ30N50L
IXTQ30N50L2 Power Field-Effect Transistor, Littelfuse Inc IXTT30N50L vs IXTQ30N50L2
IXTH30N50L2 Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN IXYS Corporation IXTT30N50L vs IXTH30N50L2

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