Part Details for MTD4N20E1 by onsemi
Overview of MTD4N20E1 by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for MTD4N20E1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-MTD4N20E1-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 2435 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT | Temporarily Out of Stock |
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$0.1400 | Buy Now |
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Rochester Electronics | 4A, 200V, 1.2ohm, N-Channel Power MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 2435 |
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$0.1160 / $0.1365 | Buy Now |
Part Details for MTD4N20E1
MTD4N20E1 CAD Models
MTD4N20E1 Part Data Attributes:
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MTD4N20E1
onsemi
Buy Now
Datasheet
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Compare Parts:
MTD4N20E1
onsemi
4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C, DPAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | CASE 369C | |
| Reach Compliance Code | unknown | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MTD4N20E1
This table gives cross-reference parts and alternative options found for MTD4N20E1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD4N20E1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTD4N20E-1 | 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C, DPAK-3 | Rochester Electronics LLC | MTD4N20E1 vs MTD4N20E-1 |
| MTD4N20E | 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D, DPAK-3 | onsemi | MTD4N20E1 vs MTD4N20E |
| MTD4N20T4 | Power Field-Effect Transistor, 4A I(D), 200V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 369A-13, DPAK-3 | Motorola Semiconductor Products | MTD4N20E1 vs MTD4N20T4 |
| MTD4N20E | 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D, DPAK-3 | Rochester Electronics LLC | MTD4N20E1 vs MTD4N20E |
| MTD4N20ET4 | 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D, DPAK-3 | onsemi | MTD4N20E1 vs MTD4N20ET4 |
| FQD5N20LTM | Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 3.8 A, 1.2 Ω, DPAK, 2500-REEL | onsemi | MTD4N20E1 vs FQD5N20LTM |
| MTD4N20E1 | 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C, DPAK-3 | Rochester Electronics LLC | MTD4N20E1 vs MTD4N20E1 |