Part Details for NP40N10VDF-E1-AY by Renesas Electronics Corporation
Overview of NP40N10VDF-E1-AY by Renesas Electronics Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for NP40N10VDF-E1-AY
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Rochester Electronics | NP40N10 - Power Field-Effect Transistor, 40A, 100V, N-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 1559 |
|
$0.4443 / $0.5227 | Buy Now |
Part Details for NP40N10VDF-E1-AY
NP40N10VDF-E1-AY CAD Models
NP40N10VDF-E1-AY Part Data Attributes:
|
NP40N10VDF-E1-AY
Renesas Electronics Corporation
Buy Now
Datasheet
|
Compare Parts:
NP40N10VDF-E1-AY
Renesas Electronics Corporation
Power MOSFETs for Automotive, MP-3ZP, /Embossed Tape
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | MP-3ZP | |
Package Description | LEAD FREE, MP-3ZP, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | PRSS0004ZP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Renesas Electronics | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 61 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 40 A | |
Drain-source On Resistance-Max | 0.037 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.2 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for NP40N10VDF-E1-AY
This table gives cross-reference parts and alternative options found for NP40N10VDF-E1-AY. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NP40N10VDF-E1-AY, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MTP40N10E | Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, CASE 221A-09, 3 PIN | Rochester Electronics LLC | NP40N10VDF-E1-AY vs MTP40N10E |
NP40N10PDF-E1-AY | Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape | Renesas Electronics Corporation | NP40N10VDF-E1-AY vs NP40N10PDF-E1-AY |
2SK3646-01SJ | Power Field-Effect Transistor, 41A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fuji Electric Co Ltd | NP40N10VDF-E1-AY vs 2SK3646-01SJ |
NDB710AEL86Z | Power Field-Effect Transistor, 42A I(D), 100V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | NP40N10VDF-E1-AY vs NDB710AEL86Z |