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Transistors / Power Field-Effect Transistors / SI5457DC-T1-GE3
Datasheets
SI5457DC-T1-GE3 by:

Power Field-Effect Transistor, 6A I(D), 20V, 0.036ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8

Part Details for SI5457DC-T1-GE3 by Vishay Intertechnologies

Overview of SI5457DC-T1-GE3 by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for SI5457DC-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 57AJ0447
Newark Mosfet, P-Ch, 20V, 6A, 1206 Chipfet Rohs Compliant: Yes |Vishay SI5457DC-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 78801
  • 1 $0.6190
  • 10 $0.5270
  • 25 $0.4650
  • 50 $0.4010
  • 100 $0.3390
$0.3390 / $0.6190 Buy Now
DISTI # 65T1700
Newark P-Channel 20-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SI5457DC-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.2200
  • 5,000 $0.2150
  • 10,000 $0.1990
  • 20,000 $0.1850
  • 30,000 $0.1730
  • 50,000 $0.1650
$0.1650 / $0.2200 Buy Now
DISTI # SI5457DC-T1-GE3
Avnet Americas Trans MOSFET P-CH 20V 6A 8-Pin SMD T/R - Tape and Reel (Alt: SI5457DC-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.2144
  • 6,000 $0.2075
  • 12,000 $0.2006
  • 18,000 $0.1925
  • 24,000 $0.1862
  • 30,000 $0.1775
  • 300,000 $0.1688
$0.1688 / $0.2144 Buy Now
DISTI # 78-SI5457DC-T1-GE3
Mouser Electronics MOSFET -20V Vds 12V Vgs 1206-8 ChipFET RoHS: Compliant 185612
  • 1 $0.4500
  • 10 $0.3620
  • 100 $0.2780
  • 500 $0.2300
  • 1,000 $0.1940
  • 3,000 $0.1750
  • 9,000 $0.1630
  • 24,000 $0.1590
  • 45,000 $0.1570
$0.1570 / $0.4500 Buy Now
DISTI # E02:0323_03046262
Arrow Electronics Trans MOSFET P-CH 20V 6A 8-Pin Chip FET T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Date Code: 2348 Europe - 3000
  • 3,000 $0.2204
$0.2204 Buy Now
DISTI # V72:2272_09216204
Arrow Electronics Trans MOSFET P-CH 20V 6A 8-Pin Chip FET T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2309 Container: Cut Strips Americas - 51
  • 1 $0.2662
  • 10 $0.2419
  • 25 $0.1604
$0.1604 / $0.2662 Buy Now
Future Electronics Single P-Channel 20 V 36 mΩ 38 nC Surface Mount Mosfet - ChipFET-1206-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 3000
Reel
  • 3,000 $0.1680
  • 6,000 $0.1650
  • 9,000 $0.1630
  • 12,000 $0.1620
  • 15,000 $0.1570
$0.1570 / $0.1680 Buy Now
Future Electronics Single P-Channel 20 V 36 mΩ 38 nC Surface Mount Mosfet - ChipFET-1206-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.1680
  • 6,000 $0.1650
  • 9,000 $0.1630
  • 12,000 $0.1620
  • 15,000 $0.1570
$0.1570 / $0.1680 Buy Now
DISTI # SI5457DC-T1-GE3
TTI MOSFET -20V Vds 12V Vgs 1206-8 ChipFET RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 21000
In Stock
  • 3,000 $0.1730
  • 6,000 $0.1700
  • 9,000 $0.1610
  • 24,000 $0.1570
$0.1570 / $0.1730 Buy Now
DISTI # SI5457DC-T1-GE3
Avnet Americas Trans MOSFET P-CH 20V 6A 8-Pin SMD T/R - Tape and Reel (Alt: SI5457DC-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.2144
  • 6,000 $0.2075
  • 12,000 $0.2006
  • 18,000 $0.1925
  • 24,000 $0.1862
  • 30,000 $0.1775
  • 300,000 $0.1688
$0.1688 / $0.2144 Buy Now
DISTI # SI5457DC-T1-GE3
TME Transistor: P-MOSFET, TrenchFET®, unipolar, -20V, -6A, Idm: -20A Min Qty: 1 0
  • 1 $0.5390
  • 5 $0.3970
  • 25 $0.3570
  • 100 $0.3150
  • 500 $0.2840
  • 3,000 $0.2640
$0.2640 / $0.5390 RFQ
DISTI # SI5457DC-T1-GE3
Avnet Asia Trans MOSFET P-CH 20V 6A 8-Pin SMD T/R (Alt: SI5457DC-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days 0
RFQ
DISTI # SI5457DC-T1-GE3
EBV Elektronik Trans MOSFET P-CH 20V 6A 8-Pin SMD T/R (Alt: SI5457DC-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 2 Weeks, 3 Days EBV - 0
Buy Now

Part Details for SI5457DC-T1-GE3

SI5457DC-T1-GE3 CAD Models

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SI5457DC-T1-GE3 Part Data Attributes:

Parametric Data
SI5457DC-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI5457DC-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 6A I(D), 20V, 0.036ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 195 pF
JESD-30 Code R-PDSO-C8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 5.7 W
Pulsed Drain Current-Max (IDM) 20 A
Reference Standard IEC-61249-2-21
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 85 ns
Turn-on Time-Max (ton) 90 ns

Alternate Parts for SI5457DC-T1-GE3

This table gives cross-reference parts and alternative options found for SI5457DC-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI5457DC-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
TSM9434CSRL Power Field-Effect Transistor, 6.4A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Taiwan Semiconductor SI5457DC-T1-GE3 vs TSM9434CSRL
IRF7404PBF-1 Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, Infineon Technologies AG SI5457DC-T1-GE3 vs IRF7404PBF-1
IRF7404PBF Power Field-Effect Transistor, 6.7A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG SI5457DC-T1-GE3 vs IRF7404PBF
IRF7404TRPBF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Infineon Technologies AG SI5457DC-T1-GE3 vs IRF7404TRPBF
IRF7404 Power Field-Effect Transistor, 5.4A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG SI5457DC-T1-GE3 vs IRF7404

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