Part Details for STI16N65M5 by STMicroelectronics
Overview of STI16N65M5 by STMicroelectronics
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for STI16N65M5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
497-11327-5-ND
|
DigiKey | MOSFET N-CH 650V 12A I2PAK Min Qty: 1 Lead time: 13 Weeks Container: Tube |
928 In Stock |
|
$2.1331 / $3.5300 | Buy Now |
|
|
Bristol Electronics | Min Qty: 2 | 50 |
|
$1.7920 / $3.5840 | Buy Now |
|
|
Quest Components | 40 |
|
$2.4000 / $4.8000 | Buy Now |
Part Details for STI16N65M5
STI16N65M5 CAD Models
STI16N65M5 Part Data Attributes:
|
|
STI16N65M5
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STI16N65M5
STMicroelectronics
12A, 650V, 0.279ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-262AA | |
| Package Description | ROHS COMPLIANT, TO-262, I2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.279 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 90 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STI16N65M5
This table gives cross-reference parts and alternative options found for STI16N65M5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STI16N65M5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPP60R299CP | Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STI16N65M5 vs IPP60R299CP |
| FCP260N65S3 | Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 12 A, 260 mΩ, TO-220 N-Channel SuperFET� III MOSFET, 650 V, 12 A, 260 m?, TO-220, 800-TUBE | onsemi | STI16N65M5 vs FCP260N65S3 |
| IPP60R299CPXKSA1 | Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STI16N65M5 vs IPP60R299CPXKSA1 |
| IPW60R299CP | Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | STI16N65M5 vs IPW60R299CP |
| IPW65R310CFD | Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | STI16N65M5 vs IPW65R310CFD |
| IPW60R299CPXK | Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | STI16N65M5 vs IPW60R299CPXK |
| STW16N65M5 | 12A, 650V, 0.279ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | STMicroelectronics | STI16N65M5 vs STW16N65M5 |
| IPW65R310CFDFKSA1 | Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | STI16N65M5 vs IPW65R310CFDFKSA1 |
| STP16N65M5 | N-channel 650 V, 0.230 Ohm typ., 12 A MDmesh M5 Power MOSFET in TO-220 package | STMicroelectronics | STI16N65M5 vs STP16N65M5 |