Parametric results for: zip code 美国银行【办证+Telegram:@BZ698】快速办理 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Power Supplies Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (5)

FAST PAGE 2,093 FAST PAGE WITH EDO 43 NIBBLE 176 PAGE 96 STATIC COLUMN 327

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Access Time-Max (19)

25 ns 1 28 ns 1 30 ns 1 35 ns 2 40 ns 8 45 ns 31 47 ns 1 50 ns 102 53 ns 4 60 ns 589 70 ns 1,041 80 ns 1,161 85 ns 17 90 ns 2 100 ns 823 120 ns 218 150 ns 81 200 ns 9 600 ns 2

Min (ns) - Max (ns)

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40 NS SAM ACCESS TIME 1 CAS BEFORE RAS/HIDDEN REFRESH 20 CAS BEFORE RAS/SELF REFRESH 10 CE/AUTO REFRESH 6 INTERNAL 320 ROWS X 256 COLUMNS X 6-BITS MEMORY ARRAY 2 RAS ONLY REFRESH 24 RAS ONLY/CAS BEFORE RAS REFRESH 112 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 1,272 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 4 SAM PORT 16 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT 34 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 2 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT 83 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 8 SAM PORT 3 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; BATTERY BACKUP OPERATION 6 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; BYTE ACCESS 6 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; LOW POWER VERSION 6 RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH 127 RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; BATTERY BACKUP 12 RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; BYTE ACCESS 6 RAS ONLY/CAS BEFORE RAS/SELF REFRESH 8 RAS ONLY; CAS BEFORE RAS REFRESH 27 RAS ONLY; CAS BEFORE RAS; BATTERY BACKUP REFRESH 15 RAS ONLY; CAS BEFORE RAS; BATTERY BACKUP; SELF REFRESH 21 RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH 671 RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH 36 RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH 6 RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH 100 RAS ONLY; CAS BEFORE RAS; SELF REFRESH 23 SELF REFRESH 2

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COMMON 1,813 SEPARATE 1,040

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R-CZIP-T20 93 R-CZIP-T24 3 R-CZIP-T28 12 R-PZIP-T16 120 R-PZIP-T18 1 R-PZIP-T19 232 R-PZIP-T20 2,079 R-PZIP-T24 289 R-PZIP-T28 437 R-PZIP-T32 14 R-PZIP-T40 722 R-PZIP-T72 42 R-XZIP-T20 34 R-XZIP-T28 10

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e0 3,092 e4 8

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20 mm 2 20.13 mm 14 20.15 mm 8 20.2 mm 9 20.4 mm 8 20.5 mm 11 20.574 mm 4 20.575 mm 9 22.7 mm 1 25.295 mm 64 25.4 mm 56 25.5 mm 205 25.6 mm 27 25.61 mm 168 25.715 mm 138 25.8 mm 88 25.82 mm 40 25.88 mm 118 26.162 mm 15 26.165 mm 258 26.67 mm 48 30.5 mm 26 30.71 mm 22 30.88 mm 7 31.75 mm 3 35.455 mm 22 35.55 mm 3 35.58 mm 74 35.9791 mm 8 36 mm 26 36.07 mm 1 36.2 mm 22 36.83 mm 22 50.71 mm 76 50.82 mm 96 50.98 mm 63 51.2 mm 84 51.2064 mm 20 51.56 mm 6

Min (mm) - Max (mm)

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Manufacturer (30)

Defense Logistics Agency 1 Electronic Designs Inc 51 Freescale Semiconductor 158 FUJITSU Limited 141 FUJITSU Semiconductor Limited 162 Hitachi Ltd 387 Infineon Technologies AG 26 Intel Corporation 19 LAPIS Semiconductor Co Ltd 253 LG Semicon Co Ltd 116 Micron Technology Inc 427 Micross Components 51 Mitsubishi Electric 232 Mosel Vitelic Corporation 56 Motorola Mobility LLC 143 Motorola Semiconductor Products 172 National Semiconductor Corporation 3 NEC Electronics America Inc 289 NMB Technologies Corporation 40 NXP Semiconductors 6 OKI Electric Industry Co Ltd 227 Panasonic Electronic Components 39 Renesas Electronics Corporation 206 Samsung Semiconductor 438 Sharp Corp 20 SK Hynix Inc 30 Texas Instruments 98 Toshiba America Electronic Components 195 United Microelectronics Corporation 72 White Electronic Designs Corp 36

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Memory Density (18)

40.384 kbit 1 65.536 kbit 4 262.144 kbit 211 491.52 kbit 5 524.288 kbit 6 1.0486 Mbit 1,275 1.0691 Mbit 1 2.0972 Mbit 3 4.1943 Mbit 1,970 4.7186 Mbit 285 8.3886 Mbit 4 9.4372 Mbit 11 16.7772 Mbit 281 18.8744 Mbit 25 33.5544 Mbit 3 37.7487 Mbit 3 67.1089 Mbit 3 75.4975 Mbit 3

Min (bit) - Max (bit)

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EDO DRAM 45 FAST PAGE DRAM 2,938 FAST PAGE DRAM MODULE 39 NIBBLE MODE DRAM 298 OTHER DRAM 29 PAGE MODE DRAM 115 STATIC COLUMN DRAM 448 VIDEO DRAM 182

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Memory Width (8)

1 1,423 4 1,570 6 5 8 259 9 112 16 490 18 187 36 28

Min - Max

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3 32

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1.0 2,752

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1 2,558 2 194

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16 120 18 1 19 232 20 2,206 24 292 28 459 32 14 40 722 72 42

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5.048 k 1 65.536 k 170 81.92 k 5 131.072 k 30 262.144 k 1,366 267.264 k 1 524.288 k 318 1.0486 M 1,284 2.0972 M 34 4.1943 M 770 16.7772 M 115

Min (words) - Max (words)

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5048.0 1 64000.0 170 80000.0 5 128000.0 30 256000.0 1,366 261000.0 1 512000.0 318 1000000.0 1,284 2000000.0 34 4000000.0 770 1.6E7 115

Min - Max

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ASYNCHRONOUS 2,671 SYNCHRONOUS 29

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60.0 °C 8 70.0 °C 3,480 85.0 °C 184 110.0 °C 5 125.0 °C 124

Min (°C) - Max (°C)

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-55.0 °C 129 -40.0 °C 184 0.0 °C 3,488

Min (°C) - Max (°C)

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Organization (30)

128KX8 30 16MX1 115 1MX1 563 1MX32 3 1MX36 3 1MX4 715 256KX1 119 256KX16 428 256KX18 187 256KX32 4 256KX36 11 256KX4 614 256KX8 3 261KX4 1 2MX32 3 2MX36 3 2MX8 14 2MX9 14 4MX1 622 4MX4 148 5048X8 1 512KX32 4 512KX36 11 512KX8 205 512KX9 98 64KX1 4 64KX16 68 64KX4 92 64KX8 6 80KX6 5

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3-STATE 3,413

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CERAMIC 28 CERAMIC, METAL-SEALED COFIRED 108 PLASTIC/EPOXY 3,936 UNSPECIFIED 16

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ZIP 4,094

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ZIP(UNSPEC) 6 ZIP16,.1 90 ZIP20,.1 1,795 ZIP24,.1 186 ZIP28(UNSPEC) 3 ZIP28,.1 316 ZIP32,.1 14 ZIP40(UNSPEC) 4 ZIP40,.1 517 ZIP72/76,.1,.1 42

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RECTANGULAR 4,094

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IN-LINE 4,094

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Power Supplies (2)

3.3 V 32 5 V 251

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Refresh Cycles (6)

128 4 256 262 512 1,556 1024 1,760 2048 110 4096 146

Min - Max

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Supply Voltage-Nom (Vsup) (3)

3 V 8 3.3 V 296 5 V 3,765

Min (V) - Max (V)

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