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71V2556S100PFG8
Integrated Device Technology Inc
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$4.5114 | Yes | Yes | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 5 ns | 100 MHz | ZBT SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 250 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-F100 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 100 | PLASTIC/EPOXY | QFF | QFP100,.63X.87 | RECTANGULAR | FLATPACK | YES | MATTE TIN | FLAT | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | TQFP | 14 X 20 MM, GREEN, PLASTIC, TQFP-100 | 100 | PKG100 | compliant | 3A991.B.2.A | 8542.32.00.41 | 1998-08-01 | ||
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71V546S100PFG8
Integrated Device Technology Inc
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$4.5114 | Yes | Yes | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 5 ns | 100 MHz | ZBT SRAM | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 250 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | MATTE TIN | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | TQFP | 14 X 20 MM, PLASTIC, TQFP-100 | 100 | PKG100 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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71V2546S150BG8
Integrated Device Technology Inc
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$4.5114 | No | No | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 3.8 ns | 150 MHz | ZBT SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 325 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | 14 X 22 MM, PLASTIC, MS-028AA, BGA-119 | 119 | BG119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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71V2556S166PFG8
Integrated Device Technology Inc
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$4.5114 | Yes | Yes | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 3.5 ns | 166 MHz | ZBT SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 350 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-F100 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 100 | PLASTIC/EPOXY | QFF | QFP100,.63X.87 | RECTANGULAR | FLATPACK | YES | MATTE TIN | FLAT | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | TQFP | 14 X 20 MM, GREEN, PLASTIC, TQFP-100 | 100 | PKG100 | compliant | 3A991.B.2.A | 8542.32.00.41 | 1998-08-01 | ||
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71V2546S150PFG8
Integrated Device Technology Inc
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$4.5114 | Yes | Yes | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 3.8 ns | 150 MHz | ZBT SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 325 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | MATTE TIN | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | TQFP | 14 X 20 MM, GREEN, PLASTIC, TQFP-100 | 100 | PKG100 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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71V2546S133BG8
Integrated Device Technology Inc
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$4.5114 | No | No | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 4.2 ns | 133 MHz | ZBT SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 300 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | 14 X 22 MM, PLASTIC, MS-028AA, BGA-119 | 119 | BG119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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71V3556S100PFG8
Integrated Device Technology Inc
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$4.5114 | Yes | Yes | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 5 ns | 100 MHz | ZBT SRAM | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 250 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | MATTE TIN | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | TQFP | 14 X 20 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TQFP-100 | 100 | PKG100 | compliant | 3A991.B.2.A | 8542.32.00.41 | 1998-08-01 | |||
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71V3558S100PFG8
Integrated Device Technology Inc
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$4.5114 | Yes | Yes | Transferred | 4.7186 Mbit | 18 | 256KX18 | 3.3 V | 5 ns | 100 MHz | ZBT SRAM | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 250 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | MATTE TIN | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | TQFP | 14 X 20 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TQFP-100 | 100 | PKG100 | compliant | 3A991.B.2.A | 8542.32.00.41 | 1998-08-01 | |||
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71V2546S100PFG8
Integrated Device Technology Inc
|
$4.5114 | Yes | Yes | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 5 ns | 100 MHz | ZBT SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 250 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | MATTE TIN | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | TQFP | 14 X 20 MM, GREEN, PLASTIC, TQFP-100 | 100 | PKG100 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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71V2546S100BG8
Integrated Device Technology Inc
|
$4.5114 | No | No | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 5 ns | 100 MHz | ZBT SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 250 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | 14 X 22 MM, PLASTIC, MS-028AA, BGA-119 | 119 | BG119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 |