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Parametric results for: k7pt-办假的泰国驾驶证【制证+微ADXC68】精仿 under SRAMs

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Manufacturer Part Number: k7p Sorted By: Organization
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K7P403611A-H2500
 Samsung Semiconductor 		Check for Price Active 4.7186 Mbit 36 128KX36 3.3 V 2 ns STANDARD SRAM PIPELINED ARCHITECTURE, SEATED HT-CALCULATED 1 128000 131.072 k SYNCHRONOUS PARALLEL 3.45 V 3.15 V CMOS COMMERCIAL R-PBGA-B119 70 °C 119 PLASTIC/EPOXY BGA RECTANGULAR GRID ARRAY YES BALL 1.27 mm BOTTOM 2.2 mm 22 mm 14 mm SAMSUNG SEMICONDUCTOR INC BGA, compliant 3A991.B.2.A 8542.32.00.41
K7P403622M-HC190
 Samsung Semiconductor 		Check for Price No Active 4.7186 Mbit 36 128KX36 3.5 ns LATE-WRITE SRAM COMMON 128000 131.072 k SYNCHRONOUS 3-STATE PARALLEL 60 mA 3.15 V 550 µA CMOS COMMERCIAL R-PBGA-B119 Not Qualified 70 °C 119 PLASTIC/EPOXY BGA BGA119,7X17,50 RECTANGULAR GRID ARRAY YES BALL 1.27 mm BOTTOM SAMSUNG SEMICONDUCTOR INC BGA, BGA119,7X17,50 compliant 3A991.B.2.A 8542.32.00.41
K7P403623B-H65
 Samsung Semiconductor 		Check for Price No No Obsolete 4.7186 Mbit 36 128KX36 3.3 V 6.5 ns STANDARD SRAM PIPELINED ARCHITECTURE, SEATED HT-CALCULATED COMMON 1 128000 131.072 k SYNCHRONOUS 3-STATE PARALLEL 120 mA 3.15 V 300 µA 3.45 V 3.15 V CMOS COMMERCIAL R-PBGA-B119 Not Qualified e0 70 °C 119 PLASTIC/EPOXY HBGA BGA119,7X17,50 RECTANGULAR GRID ARRAY, HEAT SINK/SLUG YES TIN LEAD BALL 1.27 mm BOTTOM 2.2 mm 22 mm 14 mm SAMSUNG SEMICONDUCTOR INC HBGA, BGA119,7X17,50 compliant 3A991.B.2.A 8542.32.00.41
K7P403666A-HC30
 Samsung Semiconductor 		Check for Price Obsolete 4.7186 Mbit 36 128KX36 2.5 V 1.8 ns STANDARD SRAM 1 128000 131.072 k SYNCHRONOUS PARALLEL 2.65 V 2.35 V CMOS COMMERCIAL R-PBGA-B119 Not Qualified 70 °C 119 PLASTIC/EPOXY BGA RECTANGULAR GRID ARRAY YES BALL 1.27 mm BOTTOM 22 mm 14 mm SAMSUNG SEMICONDUCTOR INC BGA, unknown 3A991.B.2.A 8542.32.00.41 BGA 119
K7P403623M-H75
 Samsung Semiconductor 		Check for Price No Obsolete 4.7186 Mbit 36 128KX36 3.3 V 7.5 ns STANDARD SRAM ALSO REQUIRES 2.5V I/O SUPPLY COMMON 1 128000 131.072 k SYNCHRONOUS 3-STATE PARALLEL 60 mA 3.15 V 500 µA 3.45 V 3.15 V CMOS COMMERCIAL R-PBGA-B119 Not Qualified e0 70 °C 119 PLASTIC/EPOXY BGA BGA119,7X17,50 RECTANGULAR GRID ARRAY YES Tin/Lead (Sn/Pb) BALL 1.27 mm BOTTOM 22 mm 14 mm SAMSUNG SEMICONDUCTOR INC BGA, BGA119,7X17,50 compliant 3A991.B.2.A 8542.32.00.41 BGA 119
K7P403623M-HC70T
 Samsung Semiconductor 		Check for Price No No Obsolete 4.7186 Mbit 36 128KX36 7 ns APPLICATION SPECIFIC SRAM COMMON 128000 131.072 k SYNCHRONOUS 3-STATE PARALLEL 60 mA 3.15 V 550 µA CMOS COMMERCIAL R-PBGA-B119 Not Qualified 1 70 °C 119 PLASTIC/EPOXY BGA BGA119,7X17,50 RECTANGULAR GRID ARRAY YES BALL 1.27 mm BOTTOM SAMSUNG SEMICONDUCTOR INC BGA, BGA119,7X17,50 compliant 3A991.B.2.A 8542.32.00.41
K7P403611A-HC270
 Samsung Semiconductor 		Check for Price No Active 4.7186 Mbit 36 128KX36 1.9 ns LATE-WRITE SRAM COMMON 128000 131.072 k SYNCHRONOUS 3-STATE PARALLEL 60 mA 3.15 V 600 µA CMOS COMMERCIAL R-PBGA-B119 Not Qualified 70 °C 119 PLASTIC/EPOXY BGA BGA119,7X17,50 RECTANGULAR GRID ARRAY YES BALL 1.27 mm BOTTOM SAMSUNG SEMICONDUCTOR INC BGA, BGA119,7X17,50 compliant 3A991.B.2.A 8542.32.00.41
K7P403666A-H25
 Samsung Semiconductor 		Check for Price No Obsolete 4.7186 Mbit 36 128KX36 2.5 V 2 ns STANDARD SRAM ALSO REQUIRES 1.5V I/O SUPPLY COMMON 1 128000 131.072 k SYNCHRONOUS 3-STATE PARALLEL 60 mA 2.35 V 550 µA 2.65 V 2.35 V CMOS COMMERCIAL R-PBGA-B119 Not Qualified e0 70 °C 119 PLASTIC/EPOXY BGA BGA119,7X17,50 RECTANGULAR GRID ARRAY YES Tin/Lead (Sn/Pb) BALL 1.27 mm BOTTOM 22 mm 14 mm SAMSUNG SEMICONDUCTOR INC BGA, BGA119,7X17,50 compliant 3A991.B.2.A 8542.32.00.41 BGA 119
K7P403666A-HC25
 Samsung Semiconductor 		Check for Price Obsolete 4.7186 Mbit 36 128KX36 2.5 V 2 ns STANDARD SRAM 1 128000 131.072 k SYNCHRONOUS PARALLEL 2.65 V 2.35 V CMOS COMMERCIAL R-PBGA-B119 Not Qualified 70 °C 119 PLASTIC/EPOXY BGA RECTANGULAR GRID ARRAY YES BALL 1.27 mm BOTTOM 22 mm 14 mm SAMSUNG SEMICONDUCTOR INC BGA, unknown 3A991.B.2.A 8542.32.00.41 BGA 119
K7P403611A-HC27T
 Samsung Semiconductor 		Check for Price No Active 4.7186 Mbit 36 128KX36 1.9 ns LATE-WRITE SRAM COMMON 128000 131.072 k SYNCHRONOUS 3-STATE PARALLEL 60 mA 3.15 V 600 µA CMOS COMMERCIAL R-PBGA-B119 Not Qualified 70 °C 119 PLASTIC/EPOXY BGA BGA119,7X17,50 RECTANGULAR GRID ARRAY YES BALL 1.27 mm BOTTOM SAMSUNG SEMICONDUCTOR INC BGA, BGA119,7X17,50 compliant 3A991.B.2.A 8542.32.00.41
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