Parametric results for: 1n4151 under Rectifier Diodes
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1N4151TR
Vishay Intertechnologies
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$0.0040 | Yes | Active | 150 mA | 1 V | 4 ns | 50 nA | 500 mW | SILICON | 75 V | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | FAST RECOVERY | 2 A | 1 | 50 V | Not Qualified | O-XALF-W2 | e2 | DO-204AH | 175 °C | 260 | 30 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | Tin/Silver (Sn96.5Ag3.5) | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | DO-35, 2 PIN | compliant | EAR99 | 8541.10.00.70 | Vishay | |||||||||
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1N4151
Diotec Semiconductor AG
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$0.0116 | Yes | Active | 200 mA | 1 V | 2 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | 2 A | 1 | Not Qualified | O-LALF-W2 | DO-35 | 1 | 200 °C | -50 °C | 260 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | DIOTEC SEMICONDUCTOR AG | compliant | EAR99 | 8541.10.00.70 | Diotec | DO-35 | 2 | |||||||||||||
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1N4151W-E3-08
Vishay Intertechnologies
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$0.0277 | Yes | Yes | Active | 150 mA | 4 ns | 410 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 75 V | 1 | 500 mA | 1 | R-PDSO-G2 | e3 | 1 | 150 °C | -55 °C | UNSPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | VISHAY INTERTECHNOLOGY INC | ROHS COMPLIANT PACKAGE-2 | compliant | EAR99 | 8541.10.00.70 | Vishay | 2 | ||||||||||||||
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1N4151TAP
Vishay Intertechnologies
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$0.0407 | Yes | Active | 150 mA | 1 V | 4 ns | 50 nA | 500 mW | SILICON | 75 V | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | FAST RECOVERY | 2 A | 1 | 50 V | Not Qualified | O-XALF-W2 | e2 | DO-204AH | 175 °C | 260 | 30 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | Tin/Silver (Sn96.5Ag3.5) | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | DO-35, 2 PIN | compliant | EAR99 | 8541.10.00.70 | Vishay | |||||||||
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1N4151
Microchip Technology Inc
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$0.9400 | No | Active | 200 mA | 1 V | 4 ns | 50 nA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | METALLURGICALLY BONDED | 500 mA | 1 | Not Qualified | O-LALF-W2 | e0 | DO-35 | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | Microchip | |||||||||||||||||
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1N4151-BP
Micro Commercial Components
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Check for Price | Yes | Yes | Obsolete | 150 mA | 2 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | METALLURGICALLY BONDED | 50 mA | 1 | Not Qualified | O-XALF-W2 | e3 | DO-35 | 1 | 150 °C | 260 | 10 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICRO COMMERCIAL COMPONENTS | ROHS COMPLIANT PACKAGE-2 | unknown | EAR99 | 8541.10.00.70 | DO-35 | 2 | ||||||||||
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PMLL4151
YAGEO Corporation
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Check for Price | Obsolete | 200 mA | 1 V | 2 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | Not Qualified | O-LELF-R2 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | PHILIPS COMPONENTS | O-LELF-R2 | unknown | EAR99 | 8541.10.00.70 | |||||||||||||||||||||||||
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PMLL4151TRL
YAGEO Corporation
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Check for Price | Obsolete | 200 mA | 1 V | 2 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | 1 | Not Qualified | O-LELF-R2 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | PHILIPS COMPONENTS | O-LELF-R2 | unknown | EAR99 | 8541.10.00.70 | ||||||||||||||||||||||||
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MX1N4151-1
Microsemi Corporation
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Check for Price | Transferred | 200 mA | 2 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | O-LALF-W2 | MIL-19500 | DO-204AH | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS, DO-35, 2 PIN | compliant | EAR99 | 8541.10.00.70 | ||||||||||||||||||||||
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1N4151
International Semiconductor Inc
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Check for Price | No | Obsolete | 150 mA | 1 V | 2 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | 2 A | 1 | Not Qualified | O-LALF-W2 | e0 | DO-35 | 200 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | INTERNATIONAL SEMICONDUCTOR INC | unknown | EAR99 | 8541.10.00.70 |