Parametric results for: 2SK40651 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ULTRA-LOW RESISTANCE 2

7 hits Apply

735.0 mJ 4

7 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 4

7 hits Apply

DS Breakdown Voltage-Min (1)

75 V 4

7 hits Apply

Drain Current-Max (ID) (1)

100 A 6

7 hits Apply

Drain-source On Resistance-Max (1)

8 mΩ 4

7 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

7 hits Apply

R-PSIP-T3 2 R-PSSO-G2 2

7 hits Apply

e3 1 e6 1

7 hits Apply

Manufacturer (3)

onsemi 2 SANYO Electric Co Ltd 2 SANYO Semiconductor Co Ltd 3

7 hits Apply

1 2

7 hits Apply

Number of Elements (1)

1 6

7 hits Apply

Number of Terminals (2)

2 2 3 2

7 hits Apply

ENHANCEMENT MODE 5

7 hits Apply

150.0 °C 2

7 hits Apply

PLASTIC/EPOXY 4

7 hits Apply

RECTANGULAR 4

7 hits Apply

IN-LINE 2 SMALL OUTLINE 2

7 hits Apply

Obsolete 4 Transferred 3

7 hits Apply

Yes 1

7 hits Apply

245 1

7 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

7 hits Apply

90 W 2

7 hits Apply

Surface Mount (2)

NO 2 YES 4

7 hits Apply