Parametric results for: an01 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE 26

40 hits Apply

DS Breakdown Voltage-Min (5)

160 V 6 200 V 4 300 V 4 320 V 6 400 V 6

Min (V) - Max (V)

40 hits Apply

Drain Current-Max (ID) (4)

25 mA 1 30 mA 27 40 mA 10 50 mA 2

Min (A) - Max (A)

40 hits Apply

Drain-source On Resistance-Max (2)

300 Ω 8 350 Ω 18

Min (Ω) - Max (Ω)

40 hits Apply

METAL-OXIDE SEMICONDUCTOR 40

40 hits Apply

1.5 pF 26

40 hits Apply

R-PDIP-T18 10 R-PDSO-G20 6 S-XUUC-N17 10

40 hits Apply

e0 40

40 hits Apply

Manufacturer (3)

Microchip Technology Inc 18 Supertex Inc 18 Telcom Semiconductor Inc 4

40 hits Apply

Number of Elements (1)

8 26

40 hits Apply

Number of Terminals (3)

17 10 18 10 20 6

40 hits Apply

ENHANCEMENT MODE 40

40 hits Apply

85.0 °C 7 125.0 °C 5 150.0 °C 28

Min (°C) - Max (°C)

40 hits Apply

PLASTIC/EPOXY 16 UNSPECIFIED 10

40 hits Apply

RECTANGULAR 16 SQUARE 10

40 hits Apply

IN-LINE 10 SMALL OUTLINE 6 UNCASED CHIP 10

40 hits Apply

Active 18 Obsolete 17 Transferred 5

40 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 40

40 hits Apply

1.4 W 3 1.5 W 5

Min (W) - Max (W)

40 hits Apply

640 mW 4 1.4 W 6 1.5 W 10 2 W 10

Min (W) - Max (W)

40 hits Apply

Surface Mount (2)

NO 24 YES 16

40 hits Apply