1.5KE11B vs MX1N6272TR feature comparison

1.5KE11B Diodes Incorporated

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MX1N6272TR Microsemi Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer DIODES INC MICROSEMI CORP
Package Description O-LALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 12.1 V 12.1 V
Breakdown Voltage-Min 9.9 V 9.9 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 16.2 V 16.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-PALF-W2
JESD-609 Code e3 e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 3 1
Rohs Code No
Pin Count 2
Manufacturer Package Code CASE 1
Breakdown Voltage-Nom 11 V
Moisture Sensitivity Level 1
Power Dissipation-Max 1.52 W
Rep Pk Reverse Voltage-Max 8.92 V

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