1.5KE220C vs 1.5KE220C feature comparison

1.5KE220C Galaxy Microelectronics

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1.5KE220C International Semiconductor Inc

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD INTERNATIONAL SEMICONDUCTOR INC
Reach Compliance Code unknown unknown
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN LOW IMPEDANCE
Breakdown Voltage-Max 242 V 242 V
Breakdown Voltage-Min 196 V 198 V
Breakdown Voltage-Nom 220 V 220 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 344 V 344 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201AE DO-201
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -50 °C -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 6.5 W 3 W
Rep Pk Reverse Voltage-Max 175 V 175 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Qualification Status Not Qualified
Reverse Current-Max 5 µA

Compare 1.5KE220C with alternatives

Compare 1.5KE220C with alternatives