1.5KE27 vs 1N6280 feature comparison

1.5KE27 Sangdest Microelectronics (Nanjing) Co Ltd

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1N6280 International Semiconductor Inc

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD INTERNATIONAL SEMICONDUCTOR INC
Package Description PLASTIC PACKAGE-2
Reach Compliance Code compliant unknown
Breakdown Voltage-Max 29.7 V 26.4 V
Breakdown Voltage-Min 24.3 V 21.6 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201AE DO-201
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 3 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 22 4
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature LOW IMPEDANCE
Breakdown Voltage-Nom 24 V
Clamping Voltage-Max 34.7 V
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Rep Pk Reverse Voltage-Max 19.4 V
Reverse Current-Max 5 µA

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