1.5KE33-GT3 vs MX1.5KE33AE3TR feature comparison

1.5KE33-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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MX1.5KE33AE3TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROSEMI CORP
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 36.3 V 34.7 V
Breakdown Voltage-Min 29.7 V 31.4 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201AE
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 1.52 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 26.8 V 28.2 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Pbfree Code Yes
Pin Count 2
Manufacturer Package Code CASE 1
Breakdown Voltage-Nom 33 V
Clamping Voltage-Max 45.7 V
JESD-609 Code e3
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 1.5KE33-GT3 with alternatives

Compare MX1.5KE33AE3TR with alternatives