1.5KE33-T vs SMCJ6053AE3 feature comparison

1.5KE33-T Diodes Incorporated

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SMCJ6053AE3 Microsemi Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer DIODES INC MICROSEMI CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 36.3 V 41 V
Breakdown Voltage-Min 29.7 V 37.1 V
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201 DO-214AB
JESD-30 Code O-PALF-W2 R-PDSO-C2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 26.8 V 33 V
Surface Mount NO YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form WIRE C BEND
Terminal Position AXIAL DUAL
Base Number Matches 1 6
Rohs Code Yes
Part Package Code DO-214AB
Package Description R-PDSO-C2
Pin Count 2
Additional Feature LOW INDUCTANCE
Breakdown Voltage-Nom 39.05 V
Clamping Voltage-Max 53.9 V
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C

Compare 1.5KE33-T with alternatives

Compare SMCJ6053AE3 with alternatives