1.5KE33A vs 1.5KE33A-H feature comparison

1.5KE33A Galaxy Microelectronics

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1.5KE33A-H Formosa Microsemi Co Ltd

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD FORMOSA MICROSEMI CO LTD
Part Package Code DO-27S
Reach Compliance Code unknown unknown
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY; AMMO: 1200; BOX: 500
Breakdown Voltage-Max 34.7 V 34.7 V
Breakdown Voltage-Min 31.4 V 31.4 V
Breakdown Voltage-Nom 33.05 V 33.05 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 45.7 V 45.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201AE DO-201AE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -50 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W 6.5 W
Rep Pk Reverse Voltage-Max 28.2 V 28.2 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Forward Voltage-Max (VF) 3.5 V
Reverse Current-Max 5 µA
Reverse Test Voltage 28.2 V

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