1.5KE33AHE3_A/C vs SMAJ11A feature comparison

1.5KE33AHE3_A/C Vishay Intertechnologies

Buy Now Datasheet

SMAJ11A Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Date Of Intro 2016-10-23
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 34.7 V 13.48 V
Breakdown Voltage-Min 31.4 V 12.2 V
Breakdown Voltage-Nom 33.05 V
Case Connection ISOLATED
Clamping Voltage-Max 45.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JESD-30 Code O-PALF-W2 R-PDSO-C2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 1500 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT APPLICABLE NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W 1 W
Reference Standard AEC-Q101; UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 28.2 V 11 V
Reverse Current-Max 1 µA
Reverse Test Voltage 28.2 V
Surface Mount NO YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form WIRE C BEND
Terminal Position AXIAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE NOT SPECIFIED
Base Number Matches 1 8
JEDEC-95 Code DO-214AC
Qualification Status Not Qualified

Compare 1.5KE33AHE3_A/C with alternatives

Compare SMAJ11A with alternatives