1.5KE350A-GT3 vs 1.5KE350P feature comparison

1.5KE350A-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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1.5KE350P STMicroelectronics

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD STMICROELECTRONICS
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown compliant
Breakdown Voltage-Max 368 V 385 V
Breakdown Voltage-Min 332 V 332 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201AE
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 300 V 299 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 350 V
Clamping Voltage-Max 618 V
Diode Capacitance-Min 430 pF
Operating Temperature-Max 175 °C
Reverse Current-Max 5 µA

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