1.5KE62AHB0 vs 1N6290A feature comparison

1.5KE62AHB0 Taiwan Semiconductor

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1N6290A MDE Semiconductor Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD MDE SEMICONDUCTOR INC
Package Description O-PALF-W2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 65.1 V 65.1 V
Breakdown Voltage-Min 58.9 V 58.9 V
Breakdown Voltage-Nom 62 V 62 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 85 V 85 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201 DO-201
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Reference Standard AEC-Q101; UL RECOGNIZED MIL-STD-750; UL LISTED
Rep Pk Reverse Voltage-Max 53 V 53 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 40
Forward Voltage-Max (VF) 3.5 V
Reverse Current-Max 5 µA
Reverse Test Voltage 53 V

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