1.5SMC62A_R2_00001 vs 1.5SMC62AHE3/9AT feature comparison

1.5SMC62A_R2_00001 PanJit Semiconductor

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1.5SMC62AHE3/9AT Vishay Semiconductors

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer PAN JIT INTERNATIONAL INC VISHAY SEMICONDUCTORS
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer PANJIT
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE HIGH RELIABILITY
Breakdown Voltage-Max 65.1 V 65.1 V
Breakdown Voltage-Min 58.9 V 58.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard IEC-61000-4-2
Rep Pk Reverse Voltage-Max 53 V 53 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Part Package Code DO-214AB
Pin Count 2
Breakdown Voltage-Nom 62 V
Clamping Voltage-Max 85 V
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 6.5 W
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30

Compare 1.5SMC62A_R2_00001 with alternatives

Compare 1.5SMC62AHE3/9AT with alternatives