1.5SMC9.1A-M3/9AT vs SMCJ8.0HR7 feature comparison

1.5SMC9.1A-M3/9AT Vishay Intertechnologies

Buy Now Datasheet

SMCJ8.0HR7 Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code not_compliant not_compliant
Factory Lead Time 8 Weeks
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 9.55 V 10.9 V
Breakdown Voltage-Min 8.65 V 8.89 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W 5 W
Rep Pk Reverse Voltage-Max 7.78 V 8 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 2 2
Package Description R-PDSO-C2
ECCN Code EAR99
HTS Code 8541.10.00.50
Reference Standard AEC-Q101

Compare 1.5SMC9.1A-M3/9AT with alternatives

Compare SMCJ8.0HR7 with alternatives