11EFS2
vs
JANS1N5614
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
KYOCERA CORP
|
MICROSS COMPONENTS
|
| Package Description |
MINIATURE PACKAGE-2
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.80
|
|
| Additional Feature |
LOW POWER LOSS
|
HIGH RELIABILITY
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.98 V
|
1.5 V
|
| JESD-30 Code |
O-XALF-W2
|
E-XALF-W2
|
| Non-rep Pk Forward Current-Max |
30 A
|
30 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Operating Temperature-Min |
-40 °C
|
-65 °C
|
| Output Current-Max |
1 A
|
2 A
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
ELLIPTICAL
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
| Reverse Recovery Time-Max |
0.03 µs
|
2 µs
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
2
|
6
|
| Breakdown Voltage-Min |
|
220 V
|
| Reference Standard |
|
MIL-PRF-19500
|
| Reverse Current-Max |
|
0.5 µA
|
| Reverse Test Voltage |
|
200 V
|
|
|
|
Compare 11EFS2 with alternatives
Compare JANS1N5614 with alternatives