14KESD6.0AE3 vs SMBJ9.0A-GT3 feature comparison

14KESD6.0AE3 Microsemi Corporation

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SMBJ9.0A-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code DO-41
Package Description O-LALF-W2 R-PDSO-C2
Pin Count 2
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 6.67 V 10 V
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AL DO-214AA
JESD-30 Code O-LALF-W2 R-PDSO-C2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 4000 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 6 V 9 V
Surface Mount NO YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form WIRE C BEND
Terminal Position AXIAL DUAL
Base Number Matches 1 2
Breakdown Voltage-Max 11.5 V
Moisture Sensitivity Level 1
Reference Standard UL RECOGNIZED

Compare 14KESD6.0AE3 with alternatives

Compare SMBJ9.0A-GT3 with alternatives