1N4153#N/A
vs
FHD41480603T
feature comparison
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
FENGHUA ADVANCED TECHNOLOGY
|
Package Description |
O-XALF-W2
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.70
|
8541.10.00.70
|
Application |
FAST RECOVERY
|
GENERAL PURPOSE
|
Breakdown Voltage-Min |
75 V
|
100 V
|
Case Connection |
ISOLATED
|
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
0.88 V
|
1.1 V
|
JEDEC-95 Code |
DO-35
|
|
JESD-30 Code |
O-XALF-W2
|
R-PDSO-R2
|
JESD-609 Code |
e0
|
|
Non-rep Pk Forward Current-Max |
1 A
|
2 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
200 °C
|
175 °C
|
Operating Temperature-Min |
-65 °C
|
|
Output Current-Max |
0.15 A
|
0.15 A
|
Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
RECTANGULAR
|
Package Style |
LONG FORM
|
SMALL OUTLINE
|
Power Dissipation-Max |
0.5 W
|
0.5 W
|
Rep Pk Reverse Voltage-Max |
75 V
|
75 V
|
Reverse Current-Max |
0.05 µA
|
5 µA
|
Reverse Recovery Time-Max |
0.004 µs
|
0.004 µs
|
Reverse Test Voltage |
50 V
|
75 V
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
Terminal Form |
WIRE
|
WRAP AROUND
|
Terminal Position |
AXIAL
|
DUAL
|
Base Number Matches |
1
|
1
|
|
|
|
Compare 1N4153#N/A with alternatives
Compare FHD41480603T with alternatives