1N4448WSR9G
vs
LBAT46T1G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
LESHAN RADIO CO LTD
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Additional Feature |
LOW POWER LOSS
|
|
| Application |
EFFICIENCY
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
|
| JESD-30 Code |
R-PDSO-F2
|
R-PDSO-G2
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
0.15 A
|
0.15 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Power Dissipation-Max |
0.2 W
|
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Reverse Current-Max |
5 µA
|
|
| Reverse Recovery Time-Max |
0.004 µs
|
|
| Reverse Test Voltage |
75 V
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
FLAT
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
2
|
| Package Description |
|
R-PDSO-G2
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Technology |
|
SCHOTTKY
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare 1N4448WSR9G with alternatives
Compare LBAT46T1G with alternatives