1N4572A-1E3
vs
JANS1N4572A-1
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROCHIP TECHNOLOGY INC
|
| Package Description |
O-LALF-W2
|
HERMETIC SEALED, GLASS, DO-7, 2 PIN
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Additional Feature |
METALLURGICAL BONDED
|
METALLURGICALLY BONDED
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JEDEC-95 Code |
DO-35
|
DO-35
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| JESD-609 Code |
e3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Reference Standard |
MIL-19500/452G
|
MIL-19500/452
|
| Reference Voltage-Nom |
6.4 V
|
6.4 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Voltage Temp Coeff-Max |
0.13 mV/°C
|
0.128 mV/°C
|
| Voltage Tol-Max |
5%
|
5%
|
| Base Number Matches |
1
|
1
|
| Factory Lead Time |
|
39 Weeks
|
| Dynamic Impedance-Max |
|
100 Ω
|
| Operating Temperature-Max |
|
100 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Polarity |
|
UNIDIRECTIONAL
|
| Qualification Status |
|
Qualified
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Working Test Current |
|
1 mA
|
|
|
|
Compare 1N4572A-1E3 with alternatives
Compare JANS1N4572A-1 with alternatives