1N5303-1E3
vs
JAN1N5303
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROSEMI CORP
|
| Part Package Code |
DO-7
|
DO-7
|
| Package Description |
ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
|
O-LALF-W2
|
| Pin Count |
2
|
2
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Additional Feature |
METALLURGICALLY BONDED, HIGH SOURCE IMPEDANCE
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
CURRENT REGULATOR DIODE
|
CURRENT REGULATOR DIODE
|
| Dynamic Impedance-Min |
475000 Ω
|
475000 Ω
|
| JEDEC-95 Code |
DO-7
|
DO-204AA
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| Limiting Voltage-Max |
1.65 V
|
1.65 V
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Power Dissipation-Max |
0.5 W
|
0.6 W
|
| Regulation Current-Nom (Ireg) |
1.6 mA
|
1.6 mA
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
FIELD EFFECT
|
FIELD EFFECT
|
| Terminal Finish |
PURE MATTE TIN
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
6
|
| JESD-609 Code |
|
e0
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare 1N5303-1E3 with alternatives
Compare JAN1N5303 with alternatives