1N5307TIN/LEAD
vs
1N5307HR
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
DIGITRON SEMICONDUCTORS
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Date Of Intro |
2018-01-18
|
|
| Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
CURRENT REGULATOR DIODE
|
CURRENT REGULATOR DIODE
|
| JEDEC-95 Code |
DO-35
|
DO-35
|
| JESD-30 Code |
O-XALF-W2
|
O-XALF-W2
|
| JESD-609 Code |
e0
|
e0
|
| Limiting Voltage-Max |
2 V
|
2 V
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Power Dissipation-Max |
0.6 W
|
0.5 W
|
| Regulation Current-Nom (Ireg) |
2.4 mA
|
2.4 mA
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
FIELD EFFECT
|
FIELD EFFECT
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
1
|
| Reference Standard |
|
MIL-19500
|
|
|
|
Compare 1N5307TIN/LEAD with alternatives
Compare 1N5307HR with alternatives