1N5629
vs
1N5629E3TR
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROSEMI CORP
|
| Package Description |
HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
|
O-MALF-W2
|
| Reach Compliance Code |
compliant
|
compliant
|
| Factory Lead Time |
21 Weeks
|
|
| Samacsys Manufacturer |
Microchip
|
|
| Breakdown Voltage-Max |
7.48 V
|
7.48 V
|
| Breakdown Voltage-Min |
6.12 V
|
6.12 V
|
| Case Connection |
CATHODE
|
CATHODE
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-202AA
|
DO-202AA
|
| JESD-30 Code |
O-MALF-W2
|
O-MALF-W2
|
| JESD-609 Code |
e0
|
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
1 W
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
5.5 V
|
5.5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
6
|
1
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-65 °C
|
|
|
|
Compare 1N5629 with alternatives
Compare 1N5629E3TR with alternatives