1N5767
vs
1N5767
feature comparison
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
COBHAM PLC
|
MICROSEMI CORP
|
Package Description |
A15, 2 PIN
|
GLASS PACKAGE-2
|
Reach Compliance Code |
unknown
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Application |
ATTENUATOR; SWITCHING
|
ATTENUATOR; SWITCHING
|
Breakdown Voltage-Min |
100 V
|
100 V
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Capacitance-Max |
0.4 pF
|
0.4 pF
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Forward Resistance-Max |
8 Ω
|
3.5 Ω
|
Diode Type |
PIN DIODE
|
PIN DIODE
|
Frequency Band |
L BAND
|
ULTRA HIGH FREQUENCY
|
JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
JESD-609 Code |
e4
|
e0
|
Minority Carrier Lifetime-Nom |
1.3 µs
|
2 µs
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Power Dissipation-Max |
0.25 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Technology |
POSITIVE-INTRINSIC-NEGATIVE
|
POSITIVE-INTRINSIC-NEGATIVE
|
Terminal Finish |
GOLD
|
TIN LEAD
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Base Number Matches |
1
|
2
|
Pbfree Code |
|
No
|
Rohs Code |
|
No
|
Pin Count |
|
2
|
Samacsys Manufacturer |
|
Microsemi Corporation
|
Additional Feature |
|
LOW DISTORTION
|
Diode Capacitance-Nom |
|
0.4 pF
|
Diode Res Test Current |
|
100 mA
|
Diode Res Test Frequency |
|
100 MHz
|
Operating Temperature-Max |
|
175 °C
|
Operating Temperature-Min |
|
-65 °C
|
|
|
|
Compare 1N5767 with alternatives
Compare 1N5767 with alternatives