1N5767
vs
1N5767
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
EATON CORP
|
MICROCHIP TECHNOLOGY INC
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
|
| Breakdown Voltage-Min |
100 V
|
100 V
|
| Diode Capacitance-Nom |
0.4 pF
|
0.4 pF
|
| Diode Forward Resistance-Max |
2.5 Ω
|
3.5 Ω
|
| Diode Res Test Current |
100 mA
|
100 mA
|
| Diode Res Test Frequency |
100 MHz
|
100 MHz
|
| Diode Type |
PIN DIODE
|
PIN DIODE
|
| JESD-609 Code |
e0
|
e0
|
| Minority Carrier Lifetime-Nom |
1 µs
|
2 µs
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN LEAD
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
GLASS PACKAGE-2
|
| Samacsys Manufacturer |
|
Microchip
|
| Additional Feature |
|
LOW DISTORTION
|
| Application |
|
ATTENUATOR; SWITCHING
|
| Case Connection |
|
ISOLATED
|
| Configuration |
|
SINGLE
|
| Diode Capacitance-Max |
|
0.4 pF
|
| Diode Element Material |
|
SILICON
|
| Frequency Band |
|
ULTRA HIGH FREQUENCY
|
| JESD-30 Code |
|
O-LALF-W2
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
GLASS
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Qualification Status |
|
Not Qualified
|
| Technology |
|
POSITIVE-INTRINSIC-NEGATIVE
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
|
|
|
Compare 1N5767 with alternatives
Compare 1N5767 with alternatives