1N5767
vs
5082-3080
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
ASI SEMICONDUCTOR INC
|
| Package Description |
GLASS PACKAGE-2
|
O-LALF-W2
|
| Reach Compliance Code |
compliant
|
unknown
|
| Samacsys Manufacturer |
Microchip
|
|
| Additional Feature |
LOW DISTORTION
|
|
| Application |
ATTENUATOR; SWITCHING
|
ATTENUATOR; SWITCHING
|
| Breakdown Voltage-Min |
100 V
|
100 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Capacitance-Max |
0.4 pF
|
0.4 pF
|
| Diode Capacitance-Nom |
0.4 pF
|
0.4 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Forward Resistance-Max |
3.5 Ω
|
2.5 Ω
|
| Diode Res Test Current |
100 mA
|
100 mA
|
| Diode Res Test Frequency |
100 MHz
|
100 MHz
|
| Diode Type |
PIN DIODE
|
PIN DIODE
|
| Frequency Band |
ULTRA HIGH FREQUENCY
|
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| JESD-609 Code |
e0
|
|
| Minority Carrier Lifetime-Nom |
2 µs
|
1300 µs
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Technology |
POSITIVE-INTRINSIC-NEGATIVE
|
POSITIVE-INTRINSIC-NEGATIVE
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
1
|
| Pin Count |
|
2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Reverse Test Voltage |
|
50 V
|
|
|
|
Compare 1N5767 with alternatives
Compare 5082-3080 with alternatives