1N5806
vs
JAN1N5806
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
SEMITRONICS CORP
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Application |
EFFICIENCY
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.875 V
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Output Current-Max |
2.5 A
|
1 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
150 V
|
150 V
|
| Reverse Recovery Time-Max |
0.025 µs
|
0.025 µs
|
| Surface Mount |
NO
|
NO
|
| Base Number Matches |
1
|
5
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| Package Description |
|
HERMETIC SEALED, GLASS, A PACKAGE-2
|
| HTS Code |
|
8541.10.00.80
|
| Samacsys Manufacturer |
|
Microsemi Corporation
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Case Connection |
|
ISOLATED
|
| JESD-30 Code |
|
O-LALF-W2
|
| JESD-609 Code |
|
e0
|
| Number of Terminals |
|
2
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
GLASS
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Power Dissipation-Max |
|
3 W
|
| Reference Standard |
|
MIL-19500
|
| Technology |
|
AVALANCHE
|
| Terminal Finish |
|
TIN LEAD OVER NICKEL
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
|
|
|
Compare 1N5806 with alternatives
Compare JAN1N5806 with alternatives