1N5809US
vs
JAN1N5809URS
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
M/A-COM TECHNOLOGY SOLUTIONS INC
|
MICROCHIP TECHNOLOGY INC
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.80
|
|
| Application |
ULTRA FAST RECOVERY POWER
|
ULTRA FAST RECOVERY
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
| Non-rep Pk Forward Current-Max |
125 A
|
125 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Output Current-Max |
3 A
|
3 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Reverse Recovery Time-Max |
0.03 µs
|
0.03 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
| Terminal Position |
END
|
END
|
| Base Number Matches |
5
|
1
|
| Rohs Code |
|
No
|
| Package Description |
|
HERMETIC SEALED, GLASS, MELF-2
|
| Additional Feature |
|
HIGH RELIABILITY, METALLURGICALLY BONDED
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Qualification Status |
|
Qualified
|
| Reference Standard |
|
MIL-19500
|
|
|
|
Compare 1N5809US with alternatives
Compare JAN1N5809URS with alternatives