1N5819 vs VS-1N5819TR feature comparison

1N5819 Galaxy Microelectronics

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VS-1N5819TR Vishay Semiconductors

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD VISHAY SEMICONDUCTORS
Part Package Code DO-41
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.6 V 0.55 V
Non-rep Pk Forward Current-Max 25 A 35 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 125 °C 150 °C
Output Current-Max 1 A 1 A
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Rep Pk Reverse Voltage-Max 40 V 40 V
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Base Number Matches 102 1
Package Description O-PALF-W2
HTS Code 8541.10.00.80
Samacsys Manufacturer Vishay
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY
Application GENERAL PURPOSE
Case Connection ISOLATED
JEDEC-95 Code DO-204AL
JESD-30 Code O-PALF-W2
Number of Terminals 2
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 1N5819 with alternatives

Compare VS-1N5819TR with alternatives