1N5819G
vs
VS-1N5819TR
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
VISHAY SEMICONDUCTORS
|
| Reach Compliance Code |
unknown
|
unknown
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
125 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-40 °C
|
| Output Current-Max |
1 A
|
1 A
|
| Rep Pk Reverse Voltage-Max |
40 V
|
40 V
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Base Number Matches |
8
|
1
|
| Package Description |
|
O-PALF-W2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Samacsys Manufacturer |
|
Vishay
|
| Additional Feature |
|
FREE WHEELING DIODE, HIGH RELIABILITY
|
| Application |
|
GENERAL PURPOSE
|
| Case Connection |
|
ISOLATED
|
| Forward Voltage-Max (VF) |
|
0.55 V
|
| JEDEC-95 Code |
|
DO-204AL
|
| JESD-30 Code |
|
O-PALF-W2
|
| Non-rep Pk Forward Current-Max |
|
35 A
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Surface Mount |
|
NO
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
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