1N5913BGE3
vs
1N5913BTA
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
ON SEMICONDUCTOR
|
| Package Description |
O-LALF-W2
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JEDEC-95 Code |
DO-204AL
|
|
| JESD-30 Code |
O-LALF-W2
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
175 °C
|
200 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
GLASS
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Polarity |
UNIDIRECTIONAL
|
|
| Power Dissipation-Max |
1.5 W
|
|
| Reference Voltage-Nom |
3.3 V
|
3.3 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
ZENER
|
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
AXIAL
|
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
113.6 mA
|
113.6 mA
|
| Base Number Matches |
1
|
3
|
| Dynamic Impedance-Max |
|
10 Ω
|
|
|
|
Compare 1N5913BGE3 with alternatives
Compare 1N5913BTA with alternatives