1N5913BGE3
vs
BZX85C3V3
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
MICROSEMI CORP
|
TELEFUNKEN MICROELECTRONICS GMBH
|
| Package Description |
O-LALF-W2
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JEDEC-95 Code |
DO-204AL
|
|
| JESD-30 Code |
O-LALF-W2
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
GLASS
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Polarity |
UNIDIRECTIONAL
|
|
| Power Dissipation-Max |
1.5 W
|
1.3 W
|
| Reference Voltage-Nom |
3.3 V
|
3.3 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
ZENER
|
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
AXIAL
|
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
113.6 mA
|
80 mA
|
| Base Number Matches |
1
|
31
|
| Dynamic Impedance-Max |
|
20 Ω
|
|
|
|
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