1N6050A vs JAN1N6050A feature comparison

1N6050A Semitronics Corp

Buy Now Datasheet

JAN1N6050A Defense Logistics Agency

Buy Now Datasheet
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer SEMITRONICS CORP DEFENSE LOGISTICS AGENCY
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 30 V
Clamping Voltage-Max 41.4 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 25 V 25 V
Surface Mount NO NO
Base Number Matches 16 7
Package Description DO-13, 2 PIN
Breakdown Voltage-Max 31.5 V
Breakdown Voltage-Min 28.5 V
Case Connection ANODE
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-13
JESD-30 Code O-XALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W
Number of Elements 1
Number of Terminals 2
Package Body Material UNSPECIFIED
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 1 W
Qualification Status Qualified
Reference Standard MIL-19500/507D
Technology AVALANCHE
Terminal Form WIRE
Terminal Position AXIAL

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