1N6112A
vs
1N6112AE3
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| Breakdown Voltage-Min |
17.1 V
|
17.1 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| Non-rep Peak Rev Power Dis-Max |
500 W
|
500 W
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Rep Pk Reverse Voltage-Max |
13.7 V
|
13.7 V
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Base Number Matches |
11
|
1
|
| Rohs Code |
|
Yes
|
| Package Description |
|
O-LALF-W2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Case Connection |
|
ISOLATED
|
| JESD-30 Code |
|
O-LALF-W2
|
| JESD-609 Code |
|
e3
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
GLASS
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Power Dissipation-Max |
|
2 W
|
| Surface Mount |
|
NO
|
| Terminal Finish |
|
MATTE TIN
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
|
|
|
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