1N6112A
vs
1N6116A
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
DIGITRON SEMICONDUCTORS
|
Reach Compliance Code |
unknown
|
unknown
|
Breakdown Voltage-Min |
17.1 V
|
25.7 V
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
Non-rep Peak Rev Power Dis-Max |
500 W
|
500 W
|
Number of Elements |
1
|
1
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Operating Temperature-Min |
-65 °C
|
-55 °C
|
Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
Rep Pk Reverse Voltage-Max |
13.7 V
|
20.6 V
|
Technology |
AVALANCHE
|
AVALANCHE
|
Base Number Matches |
11
|
11
|
Rohs Code |
|
No
|
Case Connection |
|
ISOLATED
|
Clamping Voltage-Max |
|
37.4 V
|
JESD-30 Code |
|
O-XALF-W2
|
JESD-609 Code |
|
e0
|
Number of Terminals |
|
2
|
Package Body Material |
|
UNSPECIFIED
|
Package Shape |
|
ROUND
|
Package Style |
|
LONG FORM
|
Power Dissipation-Max |
|
2 W
|
Reverse Current-Max |
|
1 µA
|
Surface Mount |
|
NO
|
Terminal Finish |
|
TIN LEAD
|
Terminal Form |
|
WIRE
|
Terminal Position |
|
AXIAL
|
|
|
|
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